Infineon – 1200 V CoolSiC™ discrete MOSFETs M1H portfolio extension in TO247-3 and in TO247-4 packages

Infineon – 1200 V CoolSiC™ discrete MOSFETs M1H portfolio extension in TO247-3 and in TO247-4 packages

Infineon is now starting the market introduction for 12 new products CoolSiC™ 1200 V discrete MOSFETs portfolio in TO247 three-pin and four-pin packages. With these products Infineon addresses the fast-growing demand for energy-efficient SiC solutions in power conversion schemes such as battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), motor drives and industrial powers supplies. The new discrete portfolio is rated from 30 mΩ up to 350 mΩ and fits for 3-phase power systems ranging from about 1 kW to 80 kW.

Features
– Ultra-low switching losses
– Threshold-free on state characteristic
– Wide gate-source voltage range
– Benchmark gate threshold voltage, Vgs(th) = 4.5 V
– 0V turn-off gate voltage for easy and simple gate drive
– Fully controllable dV/dt
– Robust body diode for hard commutation
– Temperature independent turn-off switching losses
– additionally for TO247-4 package device
– Sense pin for optimized switching performance

Benefits
– Efficiency improvement
– Enabling higher frequency
– Increased power density
– Cooling effort reduction
– Reduction of system complexity and cost

Target applications
– EV charging
– Energy storage
– Power supplies
– Motor control and drives

Competitive advantage
– High gate threshold voltage, VGS(th) = 4.5 V
– 0 V turn-off gate voltage for easy and simple gate drive
– Short circuit capability of 3 μs at gate voltage 15 V.

Application diagram

Product overview incl. Datasheet link

Product collaterals / Online support
– Product family page
– Application note
– Application brochure

Shopping