Alliance Memory Launches New High-Speed DDR3 and DDR3L SDRAMs
Alliance Memory introduces a new line of high-speed CMOS double data rate 3 synchronous DRAMs (DDR3 SDRAM) and low-voltage DDR3L SDRAMs with densities of 1 Gb, 2 Gb, and 4 Gb in 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages.
Key Specifications and Benefits:
- Internally configured as eight banks of 64M, 128M, 256M, and 512M x 8 bits and/or 16 bits
- Offered in 78-ball and 96-ball FBGA packages
- Double data rate architecture for extremely fast transfer rates of up to 1600 Mbps/pin and clock rates of 800 MHz
- Power Supply:
- +1.5 V (±0.075 V): AS4C64M16D3, AS4C128M8D3, AS4C128M16D3, AS4C256M8D3, AS4C256M16D3, and AS4C512M8D3 DDR3 SDRAMs
- +1.35 V: AS4C64M16D3L, AS4C128M8D3L, AS4C128M16D3L, AS4C256M8D3L, AS4C256M16D3L, and AS4C512M8D3L DDR3L SDRAMs
- Available in commercial (0 °C to +95 °C) and industrial (-40 °C to +95 °C) temperature ranges
- Fully synchronous operation
- Programmable read or write burst lengths of 4 or 8
- Auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence
- Easy-to-use refresh functions include auto- or self-refresh
- Programmable mode register allows the system to choose the most suitable modes to maximize performance
- RoHS compliant
- Lead (Pb)- and halogen-free
Target Applications: Industrial, consumer, and telecom products
With minimal die shrinks, our DDR3 (1.5 V) and DDR3L (1.35 V) SDRAMs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions used in conjunction with newer generation microprocessors, eliminating the need for costly redesigns and part requalification. To meet the needs of their specific applications, the devices offer designers a choice of 78-ball 9 mm by 10.5 mm by 1.2 mm and 96-ball 9 mm by 13 mm by 1.2 mm FBGA packages; densities of 1 Gb, 2 Gb, and 4 Gb; and commercial and industrial temperature ranges.
