Infineon – OptiMOS™6 40V in SS08
The MOSFET to enable higher Power Density and Compact Design
The new Optimos™5 40V benchmark MOSFET technology enables low conduction losses (best in Class RDSon performance), low switching losses (improved switching behavior), improved diode recovery and EMC behavior. This MOSFET technology is used in the most advanced and innovative packages in order to reach the best product performances and quality.
The new SS08 product offers 120A continuous current ratings, which is 20% higher than the standard DPAK at almost half of its footprint area. Footprint area: for SS08 is 35mm² and for DPAK is 65mm².
Features
- Higher current ratings
- RDSon down to 0.8mOhm
- improved switching performances
- lower package resistance and inductance
Benefits
- Reduced conduction losses and switching losses
- Optimized switching performance
- Reduced FOM factor compared to previous SFET5 40V SS08 prod-ucts
- 20% higher current ratings – compared to previous SFET5 40V SS08 TOLG package for Aluminium core IMS
Target applications
- Electric power steering
- Engine cooling fan
- Battery disconnection switch
- Battery management
- DC DC converter 48V/12V
Competitive advantages
- Best in class FOM (RDSon x Qg)
- Lower package resistance and inductance,
- Best in class switching performances,
- Extensive portfolio,
- Best product quality on the market
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