Infineon – 650V TRENCHSTOP™ 5 L5
Low Saturation Voltage Optimized IGBT Setting a New Efficiency Benchmark
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ 5 IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz.
Low V CE(sat) of 1.05V for 30A IGBTs – Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.10V for 75A IGBT.
Lowest switching losses at cos φ <1 – Yet despite the unmatched low conduction losses, device performance is not compromised by increased switching losses. The L5 Discrete IGBT have the best combination of V CE(sat) and E off losses contributing to the highest efficiency in reactive power mode, at cos φ <1.
High thermal stability of electrical parameters – With the temperature increase from 25°C to 175°C, the V CE(sat) values change only by 2% – an industry benchmark for highest reality and stable performance of the switch. New efficiency level is reachable with the new 1.05V V CE(sat) TRENCHSTOP™ 5 IGBT L5.
