Infineon – 650V TRENCHSTOP™ 5 in D2Pak (TO-263-3)
Unique, highest power density 650V IGBT in SMD package
Ultra-thin TRENCHSTOP™ 5 IGBT technology from Infineon allows higher power density in smaller chip size. Infineon is the first on the market able to fit 40A 650V IGBT with 40A diode in D2Pak package – 25% higher than any other competitor offering maximum 30A Duopack IGBT in D2Pak.
The new TRECHSTOP™ 5 IGBT in D2Pak expands the limits of surface mounted devices to the higher power range competing now with D3Pak and through hole TO-247 packages.
Features:
– Highest power density 650V IGBT in D2Pak footprint
– Unique 40A 650V IGBT Duopack in D2Pak footprint – 25% higher than any other competitor
– Best-in-class fast speed switching H5 or medium-speed optimized S5 TRENCHSTOP™ 5 IGBT technology
Benefits:
– Higher power design with D2Pak package
– Upgrade of the available designs for higher power output
– Less paralleling – > higher reliability
– Smaller PCB, more compact system design, smaller weight
Competitive advantage:
Unique 40A 650V IGBT Duopack in D2Pak footprint – 25% higher than any other competitor
Target applications:
– Welding
– UPS
– Battery chargers
– Solar
– Drives
Application examples:
– Welding machine inverter HB topology
– motor drive B6 topology
Value propositions:
– Higher power density in SDM D2Pak package – 25% higher than any competitor
– 40A IGBT co-packed with 40A diode vs maximum 30A IGBT + 30A diode from competitor
Completing products (P2S):
Gate driver: EiceDRIVER™ 1ED compact gate driver ICs
