650V TRENCHSTOP™ 5: Meeting tomorrow’s high efficiency demands

Home 650V TRENCHSTOP™ 5: Meeting tomorrow’s high efficiency demands

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TRENCHSTOP™ 5 IGBT technology provides unmatched performance in terms of efficiency for hard switching applications. The new products are optimized for PFC and PWM topologies used in applications such as Uninterruptible Power Supplies (UPS) and Inverterized Welding Machines.

TRENCHSTOP™ 5 provides you the best solution for High Performance Welding and UPS Applications:

Your Requirements   Our Solution
  • High efficiency, high quality
  • High switching frequency for higher current output
  • Low thermals for less cooling and higher reliability
  • Smaller size and lower weight of welding machine
  pfeil
  • Best-in-Class for highest performance designs
  • Highest efficiency at frequency 50-100kHz
  • Excellent welding quality due to fastest time to arc current (550µsec)
  • Lowest Tj and Tcase – up to 35°C lower than competitors
650V TRENCHSTOP™ 5 – Featured Products
Continuous Collector Current @T c=100°C TO-220  TO-220 FullPAK TO-247 New! TO-247 4pin
Single IGBT 20A IGP20N65F5
Single IGBT 40A IGP40N65F5
Single IGBT 40A IGW40N65H5
Single IGBT 50A IGW50N65F5
Single IGBT 50A IGW50N65H5
Single IGBT 100A IGZ100N65H5
DuoPack 8A IKA08N65F5
DuoPack 8A IKA08N65H5
DuoPack 15A IKP15N65F5
DuoPack 20A IKP20N65F5
DuoPack 40A IKW40N65H5
DuoPack 54A IKZ50N65NH5
DuoPack 75A IKZ75N65EH5

Header_TRENCHSTOP5_L5_WEB

NEW: 650V TRENCHSTOP™ 5 L5: Low Saturation Voltage Optimized IGBT Setting a New Efficiency Benchmark for Polarity Switches at 50Hz

 

The TRENCHSTOP™ 5 family L5 with low saturation voltage VCE(sat) is optimized for polarity switches at switching frequencies of 50kHz-20kHz. The intrinsically low conduction losses of the 55µm TRENCHSTOP™ 5 thin wafer technology have been reduced further with additional optimization of the carrier profile.

Key features
  • Lowest saturation voltage V CE(sat) of only 1.05V
  • Low switching losses of 1.6mJ @ 25°C for 30A IGBT
  • High thermal stability of electrical parameters – only 2% drift with T j increase from 25°C to 175°C
  • Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package
Portfolio
Package TO-247 TO-247 TO-247 TO-247 TO-247 4pin
Partname IKW30N65EL5 IKW30N65NL5 IGW30N65L5 IKW75N65EL5 IKZ75N65EL5
Ampere 30A 30A 30A 75A 75A
V CE(sat) [V] 1.05 1.05 1.05 1.10 1.10
V br [V] 650 650 650 650 650
Q g [nC] 168 168 168 436 436
E on [mJ] 0.47 0.56 0.47 1.61 1.57
E off [mJ] 1.35 1.35 1.35 3.20 3.20
  TRENCHSTOP™ 5 L5 IGBT + Fast Rapid 1 Diode TRENCHSTOP™ 5 L5 IGBT + Ultra Fast Rapid 2 Diode Single TRENCHSTOP™ 5 L5 IGBT TRENCHSTOP™ 5 L5 IGBT + Fast Rapid 1 Diode TRENCHSTOP™ 5 L5 IGBT + Fast Rapid 1 Diode

*characterization measurement: T vj=25°C, V cc=400V, I c=Inom, V ge=0/15V, R g=10Ω, L=60nH, C=30pF. Energy loss incl. “tail’’ and diode reverse recovery

TRENCHSTOP™ in TO-247PLUS Package – Maximum Flexibility in High Power 600V Designs TRENCHSTOP™ 5 in TO-247 4pin Package – Redefining new Levels of Switching Losses and Power Density
  •  100A and 120A IGBT co-packed with full rated diode in JEDEC standard TO-247PLUS
  • Increase of Power output or power density: One-to-one replacement of 75A IGBT with 120A device allows up to 40% power output increase keeping the same footprint and thermal conditions
  • Better thermal performance: 35% bigger thermal pad area of TO-247PLUS contributes to 10% -15% better heat dissipation allowing lower junction temperature T j
  • Higher reliability and longer lifetime
  •  Size and cost reduction
  • 20% reduction in total switching losses compared to TO-247 package using same technology
  • Extremely low emitter inductance loop· Sense pin for driver feedback· Benefit increase at high current conditions
  • IGBTs operates under lower junction temperature· Much less power dissipation under overcurrent conditions

Major Differences – TO-247 and TO-247PLUS

TO-247   TO-247PLUS
 TO-247
  • Screw hole vs. no screw hole
  • Maximum allowable chip area in single die ∼70mm² vs 120mm²
  • Current capability (DuoPAK) 600V: 75A vs 120A (+60%)
  • Increased creepage by 52% to 4.25mm
  • Bond wire limit increased from 80A to 160A
  • Bigger backside active thermal pad area due to missing hole 140mm² vs 190mm²
    • 20% lower thermal resistance R th (jh)
    • 10%-15% better heat dissipation
  to-247-plus

 

Product Briefs  Product Brief TRENCHSTOP™ 5 IGBT in TO-247 4pin Package
Product Brief Discrete IGBT in TO-247PLUS
 
Application Note Application Note Discrete IGBT in TO-247PLUS Application Note TRENCHSTOP™ 5 IGBT in TO-247 4pin Package
Videos

banner_evalboard

 

TRENCHSTOP™ 5 TO-247 4pin Package Evaluation Board

Key Features

 

  • Complete setup for evaluation of IGBT perfoevaluation_boardrmance during  switching events
  • Adaptable for devices in both TO-247 3pin and TO-247 4pin packages
  • Low inductive design, total loop inductance Lσ~35 nH including packages
  • Optional coaxial shunt for high accurate current measurement
  • Easy set of different parameters like switching current and voltage, gate resistors and case temperature
  • Configurable for continuous operation as a step-down or step-up DC-DC converter
See also

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