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New: High efficiency and easy designing IGBT with full rated current diode

 The TRENCHSTOPTM 5 S5

TRENCHSTOPTM 5 S5 is the new IGBT family addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization.


Packed with features to help the designers achieve their goals without the need to increase circuit complexity

  • Static behavior – mild positive temperature coefficient VCE(sat), meaning paralleling is no

              problem and efficiency isn’t compromised during high temperature operation. At 175°C,

              typical VCE(sat) is a low 1.6 V.

  • Dynamic behavior – single gate resistance selection for turn-on / turn-off due to the soft

               switching behavior. Clean gate signals, low dV/dt, low and very symmetrical voltage overshoot.


dynamic-trenchstop-5-S5
 

Main Benefits
Main Features
  • VCE(peak) clamping circuits not required
  • Very low VCE(sat) of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
  • Suitable for use with single turn-on / turn-off gate resistor
  • IC(n) = four times nominal current (100°C Tc)
  • No need for gate clamping components
  • Soft current fall characteristic with no tail current
  • Gate drivers with Miller clamping not required
  • Symmetrical, low voltage overshoot
  • Reduction in the EMI filtering needed
  • Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
  •  Excellent for paralleling
  • Maximum junction temperature Tvj=175°C
  • Qualified according to JEDEC standards

Main Applications:

  • UPS
  • Welding
  • Solar
  • Energy Storage
 main-applications

Product Part number IC @
100°C 
[A]
VCE(sat)@
25°C

[V]
Eon
[mJ]
Eoff
[mJ]
 QG
[nC]
 IF @
100°C
[A]
 Qrr
[μC]
 IKW30N65ES5  39.50  1.35  0.56  0.32  70  39.50 0.83
 IKW40N65ES5  50  1.35  0.86  0.40  95  50  1.10
 IKW50N65ES5  60.50  1.35  1.23  0.55  120  60.50  1.25
 IKW75N65ES5  80  1.42  2.40  0.95  164  80  1.80

Specification details

Testing conditions:

VCE(sat): typ. values, 25°C, VGE=15 V, IC=IC(nom)
Eon and Eoff: typ. values, 25°C, VCC = 400 V, IC = IC(nom), VGE = 0/15 V, RG = RG(nom), LƠ = 30 nH, CƠ = 30 pF
QG: typ. values, 25°C, VCC = 520 V, VGE = 15 V, IC = IC(nom)
Qrr: typ. values, 25°C, VCC = 400 V, IF = IF(nom), diF/dt = -1.2 kA/μs for the 30 A and 50 A, = -0.8 kA/μs for the 40 A, = -1.5 A/ns for the 75 A

See also

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