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New: High efficiency and easy designing IGBT with full rated current diode

 The TRENCHSTOP^TM 5 S5

TRENCHSTOP^TM 5 S5 is the new IGBT family addressing applications switching between 10 kHz and 40 kHz to deliver high efficiency, faster time to market cycles, circuit design complexity reduction and PCB bill of material cost optimization.

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Packed with features to help the designers achieve their goals without the need to increase circuit complexity

• Static behavior – mild positive temperature coefficient V_CE(sat), meaning paralleling is no

              problem and efficiency isn’t compromised during high temperature operation. At 175°C,

              typical V_CE(sat) is a low 1.6 V.

• Dynamic behavior – single gate resistance selection for turn-on / turn-off due to the soft

               switching behavior. Clean gate signals, low dV/dt, low and very symmetrical voltage overshoot.

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Main Benefits	Main Features
VCE(peak) clamping circuits not required	Very low VCE(sat) of 1.35 V at 25°C, 20% lower than TRENCHSTOP™ 5 H5
Suitable for use with single turn-on / turn-off gate resistor	IC(n) = four times nominal current (100°C Tc)
No need for gate clamping components	Soft current fall characteristic with no tail current
Gate drivers with Miller clamping not required	Symmetrical, low voltage overshoot
Reduction in the EMI filtering needed	Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping
Excellent for paralleling	Maximum junction temperature Tvj=175°C
	Qualified according to JEDEC standards

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Main Applications:

UPS Welding Solar Energy Storage

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Product Part number	IC @ 100°C  [A]	VCE(sat)@ 25°C [V]	Eon [mJ]	Eoff [mJ]	QG [nC]	IF @ 100°C [A]	Qrr [μC]
IKW30N65ES5	39.50	1.35	0.56	0.32	70	39.50	0.83
IKW40N65ES5	50	1.35	0.86	0.40	95	50	1.10
IKW50N65ES5	60.50	1.35	1.23	0.55	120	60.50	1.25
IKW75N65ES5	80	1.42	2.40	0.95	164	80	1.80

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Specification details

Testing conditions:

V_CE(sat): typ. values, 25°C, V_GE=15 V, I_C=I_C(nom)
E_on and E_off: typ. values, 25°C, V_CC = 400 V, I_C = I_C(nom), V_GE = 0/15 V, R_G = R_G(nom), L_Ơ = 30 nH, C_Ơ = 30 pF
Q_G: typ. values, 25°C, V_CC = 520 V, V_GE = 15 V, I_C = I_C(nom)
Q_rr: typ. values, 25°C, V_CC = 400 V, I_F = I_F(nom), di_F/dt = -1.2 kA/μs for the 30 A and 50 A, = -0.8 kA/μs for the 40 A, = -1.5 A/ns for the 75 A