IHW30N160R5 The 5th generation of reverse conducting 1600 V, 30 A TRENCHSTOP™ IGBTs with monolithically integrated reverse conducting diode...
Infineon’s new 1200V TRENCHSTOP™ IGBT7 and EC7 diode technology is based on latest micro-pattern trenches technology which provide strongly...
Infineon is presenting the first XHP™ 3 modules for high-power applications in 3,3 kV and 450 A. The XHP™...
The evaluation board EVAL-M1-IM818-A was developed to support customers during their first steps of applications with CIPOS™ Maxi IPM....
The BGA855N6 is designed to enhance GNSS signal sensitivity for band L2/L5 especially for very high accuracy. Besides GPS...
Integrated circuits that only require a few external components are...
Cutting-edge performance with excellent reliability Gallium nitride (GaN) offers fundamental advantages over silicon. In particular the higher critical electrical...
Reduced to pure function. With proven reliability. In order to serve the demand for cost improvement for larger modules...
Drive high voltage gallium nitride (GaN) HEMTs with the most robust and efficient single-channel isolated GaN EiceDRIVER™ IC on...
Evaluation board EVAL-IGBT-1200V-TO247PLUS has been developed to be a simple but accurate universal test platform for 1200 V IGBTs...
