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STMicroelectronics - Safely reduce power loss and more with low-VF D²PAK-wrapped 650 V SiC diodes - RUTRONIK-TEC STMicroelectronics - Safely reduce power loss and more with low-VF D²PAK-wrapped 650 V SiC diodes - RUTRONIK-TEC

STMicroelectronics – Safely reduce power loss and more with low-VF D²PAK-wrapped 650 V SiC diodes

Bichvan Tang, 13. July 2016, Automotive, Schottky Diode Power, Semiconductors, 650V, aecq, Automotive, barrier, d2pak, diod, diode, schottky, sic, st, stps, stpsc, STPSC10H065GY, 0

STMicroelectronics – Safely reduce power loss and more with low-VF D²PAK-wrapped 650 V SiC diodes

Using a Junction Barrier Schottky/Merged PiN structure, ST offers 650 V automotive-grade SiC diodes with the best V_F performance with no compromise on reliability, to help them to safely reduce power losses in on-board battery chargers. The new 10-amp STPSC10H065GY , available in D²PAK, features a higher surge current handling, a lower leakage current and a longer application life time compared to the pure SiC auto-grade diodes available on the market.

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DSKY4710

Appication Note