Infineon – GaN EiceDRIVER™ single-channel isolated gate driver ICs for high voltage switches

Infineon – GaN EiceDRIVER™ single-channel isolated gate driver ICs for high voltage switches

Drive high voltage gallium nitride (GaN) HEMTs with the most robust and efficient single-channel isolated GaN EiceDRIVER™ IC on the market.
CoolGaN™ e-mode HEMTs are best driven by Infineon’s EiceDRIVER™ ICs, the 1EDF5673K, 1EDF5673F and 1EDS5663H. They ensure robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.

Features
– Low ohmic outputs:
Source: 0.85Ω
Sink: 0.35Ω
– Single-channel galvanic isolation:
Functional:
VIO= 1500VDC
VIOWM = 510Vrms (16-pin DSO)
VIOWM = 460Vrms (LGA 5×5)
Reinforced: VIOTM = 8000Vpk
(VDE 0884-10 pending)
VIOWM = 1420 VDC
CMTI min: 200V/ns
– Timing:
Minimum output pulse width: 18ns
Propagation delay accuracy: 13ns

Benefits
– Positive and negative gate drive currents — fast turn-on / turn-off GaN switch slew-rates
– Firmly hold gate voltage at zero, during offphase
– Avoids spurious GaN switch turn-on
– Up to 50% lower dead-time losses
– Configurable and constant GaN switching slew-rates, across wide range of switching frequency and duty-cycle enable a robust and efficient SMPS design and short time-to-market
– Integrated galvanic isolation
– Robust operation in hard-switching applications
– Safe isolation where needed

Target applications
– Server
– Telecom DC-DC
– Datacom
– Adapter
– Charger
– Wireless charging
– SMPS

Example: High efficiency GaN switched mode power supply (SMPS)

Product collaterals / Online support
– Product family page
– CoolGaN™ and GaN EiceDRIVER™ solution brief
– CoolGaNTM brochure

Evaluation board
– CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™ EVAL_1EDF_G1_HB_GAN
– Simple GaN half-bridge with dedicated GaN driver ICs
– Capable of multi-MHz switching frequencies
– Zero reverse-recovery – can shift between hard or soft-switching
– GaN transistors feature topside cooling for high power dissipation
– provides a platform to evaluate GaN in the universal half-bridge topology, as a building block to nearly all converter and inverter applications.

Components
– CoolGaN™ 600 V e-mode HEMTs (IGOT60R070D1)
– GaN EiceDRIVER™ (1EDF5673K)

Product overview incl. data sheet link