Infineon - BGSX22G6U10 - DPDT GPIO 0.4 - 7.125 GHz antenna cross switch

Infineon – BGSX22G6U10 – DPDT GPIO 0.4 – 7.125 GHz antenna cross switch

The BGSX22G6U10 RF CMOS switch is specifically designed for GSM, WCDMA, LTE and 5G applications. This DPDT offers very low insertion loss even at high frequencies of up to 7.125GHz, low harmonic generation along with high isolation between RF ports. In addition, the fast switching speed enables 5G-SRS applications.

Features
– High linearity up to 39dBm peak power
– Low current consumption, min supply voltage 1.6 V
– Ultra low insertion loss and high port to port isolation up to 7.125 GHz
– Fast switching speed for 5G-SRS applications
– GPIO control interface
– No decoupling capacitors required for typical applications
– RoHS and WEEE compliant package
– Ultra low profile lead-less plastic package (MSL-1, 260°C per IPC/JEDEC J-STD-20)
– Size: 1.1mm x 1.5mm

Benefits
– Perfect fit for 5G-SRS application due to fast switching speed <2µs
– Extended frequency application up to 7.125 GHz
– High power handling support for 5G bands with power class 2 (n41, n77, n78, n79)
– Very Low IL up to 0.5 dB @ 5 GHz

Competitive advantage
– Very Low IL up to 0.5 dB @ 5 GHz
– Fast switching speed <2µs

Target applications
– RF path routing/swapping for cellular mobile devices
– GSM, WCDMA, 4G/LTE and 5G applications

System diagram