Infineon – 2ED2304S06F – 650 V Half Bridge Gate Driver IC with Integrated Bootstrap Diode (BSD)

Infineon – 2ED2304S06F – 650 V Half Bridge Gate Driver IC with Integrated Bootstrap Diode (BSD)

EiceDRIVER™ 650 V Infineon SOI half-bridge gate driver IC with integrated Bootstrap Diode for IGBTs and MOSFETs with 0.36 A source and 0.7 A sink currents in DSO-8 package.

Using Infineon thin-film-SOI technology, 2ED2304S06F provides excellent ruggedness and noise immunity. The Schmitt trigger logic inputs are compatible with standard CMOS or LSTTL logic down to 3.3 V. The output drivers features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 650 V. Additionally, the offline clamping function provides an inherent protection of the parasitic

Features
– Infineon thin-film-SOI-technology
– Fully operational to +650 V offset voltage
– Integrated ultra-fast, low RDSON bootstrap diode
– Output source/sink current capability +0.36 A/-0.7 A
– Tolerant to negative transient voltage up to 50 V (pulse width is up 500 ns) given by SOI-technology
– Gate drive supply range from 10 to 20 V
– Independent under-voltage lockout for both channels
– Short propagation delay and delay matching (60 ns, Maximum)
– Schmitt trigger inputs with hysteresis and pull down
– 3.3 V, 5 V and 15 V input logic compatible

The right switch makes a difference
– Greater than -100 V (500ns) negative VS robustness –faster design turns, manufacturing release, and quicker Time to Market
– Level-Shift Losses are more than 50% lower –Reduced temperature operation in the application & faster switching for new applications: HB-LLC for SMPS and LED Lighting
– Integrated bootstrap diode – real bootstrap-diode (36 Ω) compared to large-ohmic bootstrap FETs (e.g. 125 Ω) or none; BOM saving, PCB space saving, performance
– 700V capability (for 650-V switches, and for operating margin)–Scalable to lower voltages as needed
– Scalable to 1200 V for higher power applications

Block diagram

Benefits
– Integrated Bootstrap Diode -> Reduced system BOM cost
– -100V negative VS immunity -> increased reliability / robustness
– high frequency operation above 100kHz
– 50% lower Level shift losses -> lower temperature operation and high-er reliability
– Latch-up immune -> increased reliability
– Flexible, small PCB footprint, & easy to use device with footprint com-patibility to IRS2304 / IR2304

Target applications
– Major Home Appliances
– Small Home Appliances
– AC wired power tools
– Cooling compressors and fans
– Pumps and fans
– Motor control and low power drives
– General inverter applications below 1kW
– Half-bridge LLC applications

Product collaterals / Online support
– Product page & product family page
– Family product brief, 500 V—700 V product brief, 1200 V product brief
– IGBT discretes selection guide
– Power and sensing selection guide

Product overview incl. data sheet link