Infineon - Extension of CoolSiC™ MOSFET Easy portfolio with TIM

Infineon – Extension of CoolSiC™ MOSFET Easy portfolio with TIM

CoolSiC™ MOSFETs reduce the system complexity leading to lower system cost and size in mid to high power systems. Thanks to the outstanding material properties of SiC, solutions which have been possible in the low-voltage world (< 600 V) are now feasible at higher voltages as well.
Thanks to the superior trench technology in combination with the thick gate-oxide, CoolSiC™ MOSFETs offer highest reliability. In addition, our CoolSiC™ body diode is long-term stable and does not drift.

Features
– 1200 V CoolSiC™ Trench MOSFET  Pre-applied Thermal Interface Material (TIM)
– Low device capacitances
– Temperature independent switching losses
– Intrinsic diode with low reverse recovery charge
– Threshold-free on-state characteristics

Benefits
– About 80% lower switching losses compared to Si
– Reduced cooling effort and reduction of system cost
– High reliability due to superior gate oxide thickness
– Reduced system complexity
– Ease of design and implementation
– Up to 20% improved Rth by using TIM

Competitive advantage
Superior gate oxide thickness for highest reliability CoolSiC™ MOSFET body diode is long-term stable

Target applications
– Solar
– Fast EV Charging
– UPS
– Servo Drives
– Energy Storage Systems

Application diagram

Product overview incl. data sheet link

Rutronik Part Number	Infineon Part Number	SP Number	Package
POWMOD1015	FF6MR12W2M1P_B11	SP004134434	EASY2B-2
POWMOD1016	FF8MR12W2M1P_B11	SP005341588	EASY2B-2
POWMOD1018	FF11MR12W1M1P_B11	SP005035982	EASY1B-2
POWMOD1017	DF11MR12W1M1P_B11	SP005403179	EASY1B-2
POWMOD1019	DF23MR12W1M1P_B11	SP005403183	EASY1B-2
POWMOD1020	F4-23MR12W1M1P_B11	SP005035992	EASY1B-2